Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket

We report for the first time direct growth of quantum dot (QD) lasers with electrical pumping on 300 mm Si wafers both a planar template and in-pocket in-plane photonic integration. O-band five QD layers were grown molecular beam epitaxy (MBE) in reactor then fabricated into standard Fabry–Perot ridge waveguide cavities. Edge-emitting are demonstrated high yield reliable results ready commercialization scaled production, efforts to make monolithically integrated lasing cavities silicon-on-insulator (SOI) vertically aligned coupled SiN waveguides same chip show potential mm-scale integration MBE growth.